| PART |
Description |
Maker |
| 1SS302TE85LF 1SS302T5LFH |
Ultra High Speed Switching Applications
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 2SC3437 E000848 |
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING/ COMPUTER/ COUNTER APPLICATIONS)
From old datasheet system
ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| GDMBD2004 |
The GDMBD2004 is designed for ultra high speed switching
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| GBAV151 |
The GBAV151 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| 1SS34907 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| L1SS226LT1G-15 |
Ultra High Speed Switching Application
|
Leshan Radio Company
|
| L1SS184LT1G |
Ultra High Speed Switching Application
|
Leshan Radio Company
|
| 1SS18407 1SS184 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS337 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS226T5LFT 1SS226TE85L |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
